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Electrical Insulation in Amorphous Bubble Domain Devices

IP.com Disclosure Number: IPCOM000087013D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

Although amorphous bubble films possess many advantages over conventional garnet films, the electrical insulation between the bubble film (usually GdCo and GdCo X films) and the control lines is critical. A very thin insulation layer (on the order of 1,000 Angstroms) is required over a large surface area.

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Electrical Insulation in Amorphous Bubble Domain Devices

Although amorphous bubble films possess many advantages over conventional garnet films, the electrical insulation between the bubble film (usually GdCo and GdCo X films) and the control lines is critical. A very thin insulation layer (on the order of 1,000 Angstroms) is required over a large surface area.

This method gives a very high insulation yield in such devices. It combines two oxide layers to provide maximum insulation - the RF grown oxides of GdCo and evaporated SiO(2) (Ga backed to maintain the film at room temperature).

Typical RF oxidation in a sputtering system is carried out under the following conditions: RF oxidation time

Sample No. (min) Estimated thickness (Angstroms) 2D 100

3F 50 Approx. 50-100

6D 10

Substrate temp.: 24 degrees C
Oxidation pressure: 2 x 10 torr.

RF voltage: 360 volts peak-to-peak Electrical insulation tests show the following results: 1000 Angstroms SiO film alone on GdCo film : Insulation

yield* = 81%

"

" 86%

1000 Angstroms SiO film on 50 min. oxide : "

" " " " 100 " " "

" 94%

" 97%.

Some of the advantages of this method for obtaining good electrical insulation are: 1) how temperature (usually room temperature) process.

2) Pinholes and other defects existing on the GdCo film

surface are covered with oxides by RF sputtering, and

further protected by evaporated SiO film, resulting

in a good insulation yield. * The insulation yield was tested with 9.5 volts applied across dot...