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Electrical Insulation in Amorphous Bubble Film Devices

IP.com Disclosure Number: IPCOM000087014D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

Amorphous bubble films have many advantages that conventional garnet films do not possess, such as cheap films resulting from inexpensive substrates and deposition techniques, and composition flexibility which can be chosen in accordance with device design. On the other hand, there are several problems associated with this material. One of them is the electrical insulation between the bubble film and the control lines.

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Electrical Insulation in Amorphous Bubble Film Devices

Amorphous bubble films have many advantages that conventional garnet films do not possess, such as cheap films resulting from inexpensive substrates and deposition techniques, and composition flexibility which can be chosen in accordance with device design. On the other hand, there are several problems associated with this material. One of them is the electrical insulation between the bubble film and the control lines.

This method yields a very high electrical insulation in such devices. It consists of a two-layer structure of RF plasma-oxidized (GdCo)(x)O(y) and a sputtered film of SiO(2) or Si(3)N(4).

The plasma oxide is generally grown rather rapidly, typically 3 to 5 min., in a low pressure, low temperature plasma in a machine, such as International Plasma Corporation's 1003B Plasma System, which consists of a source for RF power, plasma treatment chamber and a vacuum pump. GdCo films were oxidized under the following conditions: Pressure: 1 torr
Power: 25 watts
Time: 1 min. for 173 Angstroms thick oxides Up to 500 Angstroms 3 min. for 340 Angstroms oxide. thickness, the

process seems to be

linear with time;

after which, very

little oxidation

takes place.

Electrical insulation tests on several samples show the following results:

Applied voltage across 1,000 Angstroms insulation = 9.5 volts RF plasma-oxidized film alone: Insulation yield* = 0% Sputtered SiO(2) films alone: " " = 93% average Sputtered Si(3)N(...