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RF Sputter Clean Dip Etch Cleaning Process for Low Via Hole Contact Resistance

IP.com Disclosure Number: IPCOM000087054D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Garant, HI: AUTHOR [+4]

Abstract

This describes a sputter cleaning/chemical cleaning procedure for utilization with semiconductors having two or more layers of metallurgy with insulating layers between the layers of metallurgy where numerous low resistance contacts are required between the interconnecting metal layers.

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This is the abbreviated version, containing approximately 70% of the total text.

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RF Sputter Clean Dip Etch Cleaning Process for Low Via Hole Contact Resistance

This describes a sputter cleaning/chemical cleaning procedure for utilization with semiconductors having two or more layers of metallurgy with insulating layers between the layers of metallurgy where numerous low resistance contacts are required between the interconnecting metal layers.

RF sputter cleaning is well known as a means of removing both organic and inorganic material. It is also known, however, that a certain degree of backsputtering and/or chemical reaction can and does occur which can leave undesirable species on the surface of the clean materials which may hinder good contact with subsequently applied materials.

Semiconductor products to be sputter-cleaned are first placed on a 10 inch diameter cathode covered by a silicon dioxide insulating plate. The system is then pumped down to 2 x 10/-6/torr and backfilled with argon to 15 microns pressure while maintaining an argon flow rate of 10 standard cubic centimeters per minute. Once a suitable flow rate is established, RF power is applied, utilizing a 13.56 megahertz generator and a tuning network to match the generator to load and minimize the reflected power. A power of 350 watts for a 10 inch diameter cathode has been found to be effective.

This power is applied for 18 minutes, following which the power is shut off and the argon flow terminated. Following stoppage of the argon flow, the system is flushed with nitrogen and...