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Surface Ion Migration Reliability Monitor

IP.com Disclosure Number: IPCOM000087060D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Potter, MD: AUTHOR

Abstract

This describes a technique which accurately describes long term failure behavior due to surface ion migration in metal-insulated semiconductor field-effect transistors, by the simple expedient of screening the devices for surface ion migration.

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Surface Ion Migration Reliability Monitor

This describes a technique which accurately describes long term failure behavior due to surface ion migration in metal-insulated semiconductor field- effect transistors, by the simple expedient of screening the devices for surface ion migration.

The technique for establishing this surface migration is as follows: The field- effect transistor under consideration first has its threshold voltage determined by utilizing standard techniques. Following this, the device has its drain current determined by grounding the source and the substrate of the device while biasing the drain at .5 volts and the gate at the threshold voltage -.5 volts, which causes the device to operate in the subthreshold voltage range. Once the subthreshold drain current has been measured, the device is stressed for a period of 5 seconds by boosting up the gate voltage. When the device, for example, has a 1,000 angstrom gate oxide thereon, the gate voltage should be boosted to approximately 25 volts DC for a 5 second period. At the end of this 5 second period, the device is again tested and the subthreshold drain current is measured under the conditions described above. After this second measurement of subthreshold drain current, the device is again stressed by again applying a high gate voltage. In this instance, however, the gate voltage is increased by 3 volts to 28 volts. Once again, following this stressing of the device by the increased gate voltage...