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Elimination of Parasitic Currents in Transistor Schottky Barrier Diode Circuit

IP.com Disclosure Number: IPCOM000087084D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Bhatia, HS: AUTHOR [+4]

Abstract

In an integrated circuit comprising a transistor and a Schottky barrier diode formed within the same isolation region, a parasitic silicon-controlled rectifier (SCR) tends to form between the Schottky diode and the transistor at high current levels. This is eliminated by interposing a highly doped region between the Schottky contact and the transistor for collecting minority carriers generated by the Schottky contact. Advantageously, an N+ reach-through region from the collector contact to the subcollector is used as the minority carrier collector.

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Elimination of Parasitic Currents in Transistor Schottky Barrier Diode Circuit

In an integrated circuit comprising a transistor and a Schottky barrier diode formed within the same isolation region, a parasitic silicon-controlled rectifier (SCR) tends to form between the Schottky diode and the transistor at high current levels. This is eliminated by interposing a highly doped region between the Schottky contact and the transistor for collecting minority carriers generated by the Schottky contact. Advantageously, an N+ reach-through region from the collector contact to the subcollector is used as the minority carrier collector.

Referring to the figures, the SCR may be formed from the PNPN sandwich consisting of the hole emitting contact 13 (P), epitaxial layer 9 (N), base 8 (P) and emitter 6 (N). No SCR action can occur, however, if collector reach-through 11 is disposed as a barrier between contact 13 and base 8. The need for reach- through 11 to subcollector 4, as compared to a collector contact 12 only, depends on the doping of epitaxial layer 9 and the magnitude of current within the cell.

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