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Determining Excess Silicon in Al Cu Si Films on Silicon Wafers

IP.com Disclosure Number: IPCOM000087111D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bohg, A: AUTHOR [+2]

Abstract

Thin layers of silicon epitaxially grown on sapphire can be used as monitors to measure by X-ray fluorescence the amount of excess silicon precipitated from Al/Cu/Si-films on silicon wafers.

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Determining Excess Silicon in Al Cu Si Films on Silicon Wafers

Thin layers of silicon epitaxially grown on sapphire can be used as monitors to measure by X-ray fluorescence the amount of excess silicon precipitated from Al/Cu/Si-films on silicon wafers.

If <100> oriented wafers are used, a thin silicon layer is epitaxially grown on a <1102> oriented plane of the sapphire. The amount of silicon in a predetermined area of the silicon layer is measured by X-ray fluorescence. The monitor together with the device wafers, are subjected to conventional Al/Cu/Si evaporation and subsequently annealed. During the annealing step, the excess silicon precipitates in the form of small mounds on the silicon surface. The Al/Cu/Si film is removed. leaving the silicon layers with the mounds on it. The amount of silicon is remeasured in the same area and by the same method as indicated above. The difference between the two determinations indicates the amount of excess silicon.

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