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Analysis of Silicon Oxide or Silicon Nitride Layers by X Ray Fluorescence

IP.com Disclosure Number: IPCOM000087117D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 20K

Publishing Venue

IBM

Related People

Bohg, A: AUTHOR [+2]

Abstract

The weight ratio of silicon (si) to oxygen (0) and Si to nitrogen (N) in silicon oxide and silicon nitride layers, respectively, applied to aluminum phosphide (AlP) wafers can be determined by means of X-ray fluorescence by measuring, before and after the application of the silicon oxide and the silicon nitride layer, respectively, the intensity of the K radiation of the wafer constituents Al and P excited by the X-rays.

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Analysis of Silicon Oxide or Silicon Nitride Layers by X Ray Fluorescence

The weight ratio of silicon (si) to oxygen (0) and Si to nitrogen (N) in silicon oxide and silicon nitride layers, respectively, applied to aluminum phosphide (AlP) wafers can be determined by means of X-ray fluorescence by measuring, before and after the application of the silicon oxide and the silicon nitride layer, respectively, the intensity of the K radiation of the wafer constituents Al and P excited by the X-rays.

The weight ratio Si:O (a corresponding equation applies to the Si:N ratio) is obtained in accordance with

(Image Omitted)

where A = 1nI(P) - 1n I(o(P)) over 1nI(Al) - 1n I(o(Al))

Mu(Si(P)) = mass attenuation coefficient of phosphorous K radiation in Si [in cm/2//g],

O = partial density (in g/cm/3/] of 0 in the layer,

I(o(P)) = intensity of phosphorous K radiation before application of the layer, and

I(P) = intensity of phosphorous K radiation after

application of the layer.

(Image Omitted)

From O over Si the empirical formula of the silicon oxide can be readily calculated.

The method can be used to determine the composition of silicon oxide or silicon nitride layers deposited on semiconductor wafers by chemical vapor deposition, evaporation, and sputtering in that an AlP control wafer is processed with the device wafers.

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