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Shaped Electrodes of Josephson Junctions

IP.com Disclosure Number: IPCOM000087190D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Kotyczka, W: AUTHOR

Abstract

Small rest current in the switched-off state of a Josephson gate is achieved by combined shaping of the junction area and of the upper electrode.

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Shaped Electrodes of Josephson Junctions

Small rest current in the switched-off state of a Josephson gate is achieved by combined shaping of the junction area and of the upper electrode.

The gate gain characteristic is influenced by the junction shape and the variation of local current density. An improved characteristic can be achieved by making the junction area wider in the center region and having there a maximum current density. The junction area may be diamond-shaped. The upper electrode is relatively wide but constricted in the junction region.

Referring to the figure, a ground plane (not shown) is coated with a first insulating layer. It carries a metallized strip line as a relatively wide lower electrode. A second insulating layer on top provides the window to deposit a thin oxide layer, forming the tunneling junction. This (shaded) area is diamond- shaped. On top is the parallel-running upper electrode, which is also relatively wide but constricted in the junction region. A third insulating layer carries the parallel control lines of the gate.

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