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Five Terminal High Performance MOSFET With Electrically Controllable Channel Length

IP.com Disclosure Number: IPCOM000087216D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Crowder, BL: AUTHOR [+2]

Abstract

Electrical control of channel length can be achieved by the use of an appropriately biased depletable gate electrode, as shown in the figure.

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Five Terminal High Performance MOSFET With Electrically Controllable Channel Length

Electrical control of channel length can be achieved by the use of an appropriately biased depletable gate electrode, as shown in the figure.

This is a schematic diagram of the proposed device structure. It is to be noted that a normally-on device can be realized by employing an n type semiconductor gate with a positive bias in which the application of a negative bias to the control electrode will turn the device off.

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