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Anodized GaAs Solar Cells

IP.com Disclosure Number: IPCOM000087226D
Original Publication Date: 1976-Dec-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR [+2]

Abstract

The high energy response of a GaAs solar cell can be improved by anodizing to produce an anodized layer approximately 750 Angstroms. The layer also improves the open circuit voltage.

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Anodized GaAs Solar Cells

The high energy response of a GaAs solar cell can be improved by anodizing to produce an anodized layer approximately 750 Angstroms. The layer also improves the open circuit voltage.

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