Browse Prior Art Database

Multiple V Groove FET

IP.com Disclosure Number: IPCOM000087239D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 90K

Publishing Venue

IBM

Related People

Hsu, SB: AUTHOR [+4]

Abstract

A metal gate or silicon gate process for fabricating FETs (field-effect transistors) may be readily altered to achieve a VMOS (metal oxide semiconductor with V-shaped region) device with well-defined gate channel length, minimized overlap capacitance, reduced gate width variation and high density. The diffusion resistance of such a device will be low due to a larger width which will tend to make the device switch faster.

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Multiple V Groove FET

A metal gate or silicon gate process for fabricating FETs (field-effect transistors) may be readily altered to achieve a VMOS (metal oxide semiconductor with V-shaped region) device with well-defined gate channel length, minimized overlap capacitance, reduced gate width variation and high density. The diffusion resistance of such a device will be low due to a larger width which will tend to make the device switch faster.

Fig. 1A shows a P- substrate 10 including an oxide layer 1 in which openings are formed to permit grooves 2 to be formed in the substrate 10. The grooves 2 are formed by anisotropic etches, typically KOH.

Fig. 1B shows Ndiffusion regions 3 formed about the grooves 2. The regions 3 are formed by conventional processes using phosphorous or arsenic as the typical diffusion. The diffused regions may be formed by other techniques, for example, ion implantation. An oxide layer 4 is reformed over the regions 3 by conventional processes. During regrowth, drive-in of the diffused regions 3 occurs. After drive-in, the oxide layer 1, 4 is approximately masked to permit etching of the substrate between the regions 3 (Fig. 1C). Anisotropic etching of the substrate occurs to form the V-shaped region 5. In Fig. 1D an oxide layer 6 is formed as the gate insulation for the regions 3 which serve as source and drain, as shown in Fig. 2. An opening may be made in the insulation 4 as a contact for metallization 7 which is deposited on the oxide...