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Quenching Process for Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000087348D
Original Publication Date: 1977-Jan-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Melhado, RL: AUTHOR [+3]

Abstract

Schottky barrier diodes (SBD) should operate with a controlled, limited variance forward voltage. The processing involved to achieve this characteristic includes heat treatment of the SBD metallization at 450 Degrees C followed by a quench to room temperature. A gas with high thermal conductivity such as helium, is used as the quenching medium.

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Quenching Process for Schottky Barrier Diodes

Schottky barrier diodes (SBD) should operate with a controlled, limited variance forward voltage. The processing involved to achieve this characteristic includes heat treatment of the SBD metallization at 450 Degrees C followed by a quench to room temperature. A gas with high thermal conductivity such as helium, is used as the quenching medium.

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