Browse Prior Art Database

Vapor Deposition of Multicomponent Layers

IP.com Disclosure Number: IPCOM000087387D
Original Publication Date: 1977-Jan-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Bohg, A: AUTHOR [+2]

Abstract

For producing a quasi-homogeneous layer of, for example, three components cl, c2 and c3, each element is vapor-deposited in the following manner from a crucible with a cover.

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Vapor Deposition of Multicomponent Layers

For producing a quasi-homogeneous layer of, for example, three components cl, c2 and c3, each element is vapor-deposited in the following manner from a crucible with a cover.

A short time period T is subdivided into three time intervals t1, t2 and t3 (in accordance with the three elements). During t1, the crucible is closed to component c1, so that only c2 and c3 are vapor-deposited on the substrates. During t2, the crucible is closed to c2, so that only c1 and c3 are vapor- deposited. During t3, the crucible is closed to c3, so that only c1 and c2 are vapor-deposited.

As the compounds (c2 + c3, c1 + c3, c1 + c2) deposited during the individual time intervals in accordance with existing methods (e.g., the microbalance or quartz-crystal oscillator method) and the length of the time intervals t1, t2 and t3 are known, the percentage composition of the deposited layer can he calculated by computer, using three equations with three unknown quantities. In the case of deviations from the required values, the subsequent vapor deposition periods can be corrected by changing the duration of the time intervals into t1', t2' and t3' (by a suitable computer-dependent cover control). It can be assumed that, during the short vapor-deposition period T, there are no changes in the vapor- deposition rates and that the compound layers, deposited in the time intervals, are microscopically so thin that a plurality of these layers deposited in...