Browse Prior Art Database

Power Module with High Power Dissipation

IP.com Disclosure Number: IPCOM000087506D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 75K

Publishing Venue

IBM

Related People

VanVestrout, VD: AUTHOR

Abstract

The package shown in Fig. 1 allows a plurality of diodes or power transistors 10 to be mounted in a package with low power large-scale integration (LSI) circuitry 15. The low power LSI circuitry 15 is mounted on a metallized ceramic substrate 20 by conventional techniques. The power transistors or diodes 10 are connected to the circuitry on metallized ceramic substrate 20 by means of wire bonds 25.

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Power Module with High Power Dissipation

The package shown in Fig. 1 allows a plurality of diodes or power transistors 10 to be mounted in a package with low power large-scale integration (LSI) circuitry 15. The low power LSI circuitry 15 is mounted on a metallized ceramic substrate 20 by conventional techniques. The power transistors or diodes 10 are connected to the circuitry on metallized ceramic substrate 20 by means of wire bonds 25.

Power transistors 10 are back-bonded to a KOVAR* plate 30 which acts as a heat sink. The KOVAR plate 30 can, in turn, be mounted on a larger heat sink
35. Pins 40 can be brazed to the metallized ceramic 20 and a cap with pins 40 extending therethrough can be placed over the entire assembly.

An alternative structure is shown in Fig. 2. In this structure, copper bolts 50, which have metal copper fins 55 attached thereto, contact the KOVAR plate 30, providing good heat dissipation.

The module shown effectively integrates high power and low power integrated circuits. * Trademark of Westinghouse Electric Corporation.

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