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Reliability Monitor for Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000087524D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Hornung, A: AUTHOR

Abstract

A Schottky barrier diode (SBD) instability mechanism may be induced when the diodes are subjected to a forward-bias stress condition. The mechanism is temperature-activated and may occur in a short time (minutes) at elevated temperatures (~180 Degrees C). It is believed to be due to ionic contaminants introduced into the SBD contact hole during the manufacturing process.

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Reliability Monitor for Schottky Barrier Diodes

A Schottky barrier diode (SBD) instability mechanism may be induced when the diodes are subjected to a forward-bias stress condition. The mechanism is temperature-activated and may occur in a short time (minutes) at elevated temperatures (~180 Degrees C). It is believed to be due to ionic contaminants introduced into the SBD contact hole during the manufacturing process.

To monitor and/or screen products for this problem, a wafer "hot chuck" stress technique is used. The equipment consists of the wafer heat stage and the automatic tester shown in Figs. 1 and 2, respectively. The product test site or kerf SBD is probed at the wafer level and tested for SBD parameters. It is then heated to ~180 Degrees C for around 5 minutes with a small current passing through each SBD, cooled rapidly with bias still applied, and retested to determine parameter shifts.

The time-temperature relationship is unique and can be optimized for particular product designs and commercially available, heat stage characteristics. This technique can be applied at the first, second or third level wiring and, also, at the final chip joining level.

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