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Integrated Circuit Semiconductor Device Package Structure

IP.com Disclosure Number: IPCOM000087531D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Johnson, AH: AUTHOR

Abstract

In this package structure, a permanent thermal path is established between the semiconductor chip and the heat sink, and electrical contact is made to the chip pad without a metallurgical bond being formed.

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Integrated Circuit Semiconductor Device Package Structure

In this package structure, a permanent thermal path is established between the semiconductor chip and the heat sink, and electrical contact is made to the chip pad without a metallurgical bond being formed.

Referring to Fig. 1, electrical contact is formed between pads 10 on semiconductor device 12 and pads 14 on the chip carrier substrate 16 with an interposer element 20. Interposer 20 is made with plated buttons 22 of a deformable conductive metal supported on a flat element 24 of an insulating material. The buttons 22 extend through the element 24 and deform at each contact position. Pressure is applied to the interposer 20 through chip 12, with a heat sink 26 positioned in direct contact with chip 12. Spring elements 28 secured by bolts 30 urge the heat sink towards chip carrier 16. A suitable deformable ring 32 forms a seal about the device 12. The same force exerted by springs 28 that holds the contacts 10 and 14 into contact with the interposer 20 is used to keep the heat sink in intimate contact with the device.

Any suitable type of heat sink can be used, as indicated in Figs. 2 and 3. In Fig. 2, the heat sink 32 is provided with cooling fins 34 and also spring elements
28. In Fig. 3, the heat sink 36 is provided with a fluid chamber with conduits 38 and 39 for circulating a suitable cooling fluid in the chamber.

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