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Reactive Ion Etch of Fe(2)O(3)

IP.com Disclosure Number: IPCOM000087537D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bondur, JA: AUTHOR [+3]

Abstract

Masks for integrated circuit semiconductor processing consisting of ion oxide over glass for use as a photolithographic mask has been suggested. In the fabrication of these masks, the conventional forming of the desired pattern by subtractive etching is not completely satisfactory, particularly for forming fine-line patterns, because undercutting of the material to be etched severely limits the resolution obtainable.

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Reactive Ion Etch of Fe(2)O(3)

Masks for integrated circuit semiconductor processing consisting of ion oxide over glass for use as a photolithographic mask has been suggested. In the fabrication of these masks, the conventional forming of the desired pattern by subtractive etching is not completely satisfactory, particularly for forming fine-line patterns, because undercutting of the material to be etched severely limits the resolution obtainable.

In this process, a blanket layer of Fe(2)O(3) is formed on a suitable glass plate, a layer of photoresist is deposited on the Fe(2)O(3) and exposed to the desired pattern and developed. The photoresist pattern is then used as a mask when the glass plate is reactively ion etched.

The glass plate is etched on a target electrode utilizing CCl(4) as a reactive gas in an argon ambient and establishing a glow discharge within an RF field. The result is that the Fe 0 is etched away at a rate of at least 300 angstroms per minute at a power density of 0.3 W/cm/2/ without undercut.

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