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Selective Oxidation of Silicon in Oxygen Plasma

IP.com Disclosure Number: IPCOM000087540D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 87K

Publishing Venue

IBM

Related People

Ma, TP: AUTHOR [+2]

Abstract

A selective oxidation process is carried out using a low temperature plasma.

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Selective Oxidation of Silicon in Oxygen Plasma

A selective oxidation process is carried out using a low temperature plasma.

As illustrated in Fig.1a, a layer of aluminum is evaporated on the oxidized surface of a silicon substrate. The aluminum is selectively photoetched to leave a pattern of aluminum on the substrate, as illustrated in Fig. 1b. The substrate is then placed in a DC or RF plasma at a frequency of 13.56 megahertz and a power of 400 to 600 watts with 300 to 1,000 microns of oxygen pressure. The silicon and aluminum are oxidized, as shown in Fig. 1c. The Al(2)O(3) and Al layers are removed by a hot phosphoric acid etch (Fig. 1d). The underlying thin 500 angstrom oxide layer is then removed with buffered HF to leave the selectively oxidized structure illustrated in Fig. 1e.

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