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High Speed Doping Profile Measuring

IP.com Disclosure Number: IPCOM000087563D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Baier, H: AUTHOR [+3]

Abstract

High-accuracy measuring consists of repeated steps of electrochemically sectioning and van der Pauw incremental sheet resistance (ISR) measuring p+ and n+ Si monitor wafers. For anodic removal, hydrofluoric acid having a 2 - 10% concentration is used at current densities of 50 to 400 mA/cm/2/.

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High Speed Doping Profile Measuring

High-accuracy measuring consists of repeated steps of electrochemically sectioning and van der Pauw incremental sheet resistance (ISR) measuring p+ and n+ Si monitor wafers. For anodic removal, hydrofluoric acid having a 2 - 10% concentration is used at current densities of 50 to 400 mA/cm/2/.

High speed is ensured, since change of electrolyte and rinsing between measuring steps are not necessary, provided that the potential drop between the ISR-test points remains below 0.1 V.

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