Browse Prior Art Database

Hetero Junction Buried Charge Coupled Device

IP.com Disclosure Number: IPCOM000087568D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Olesek, GM: AUTHOR

Abstract

Surface channel charge-coupled devices transfer and store signal charge in potential wells at the Si-SiO(2) interface. In contrast, this design features a buried channel charge-coupled device (BCCD) which utilizes the band-gap energy concentration dependence of the Si-Ge alloy system.

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Hetero Junction Buried Charge Coupled Device

Surface channel charge-coupled devices transfer and store signal charge in potential wells at the Si-SiO(2) interface. In contrast, this design features a buried channel charge-coupled device (BCCD) which utilizes the band-gap energy concentration dependence of the Si-Ge alloy system.

The Si-Ge region may be formed by ionimplantation or epitaxial vapor-phase growth. In both the above procedures, the objective is to locate the potential minimum in the N type region where the Ge concentration is maximized, and to obtain higher transfer speed (over pure Si BCCD) due to increased carrier mobility in the Si-Ge system over pure Si.

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