Browse Prior Art Database

Changing Local Bias Fields in Magnetic Bubble Devices

IP.com Disclosure Number: IPCOM000087627D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Collins, TW: AUTHOR

Abstract

Bubble lattice devices have a low bias field over the storage area (i.e., lattice) of the device and a high bias field over the generation and detection areas. The bubble lattice structure shown in Figs. 1 and 2 includes a layer 12 of a soft magnetic material, such as permalloy, over the area 14 in which the lattice is located. The layer 12 is positioned over the conductors 16 which are located above the lattice area 14 of the bubble layer 18.

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Changing Local Bias Fields in Magnetic Bubble Devices

Bubble lattice devices have a low bias field over the storage area (i.e., lattice) of the device and a high bias field over the generation and detection areas. The bubble lattice structure shown in Figs. 1 and 2 includes a layer 12 of a soft magnetic material, such as permalloy, over the area 14 in which the lattice is located. The layer 12 is positioned over the conductors 16 which are located above the lattice area 14 of the bubble layer 18.

The layer 12 lowers the effective bias field necessary to obtain lattice stability, while maintaining proper bias in the isolated bubble area. Layer 12 reduces the need for milled steps in the bubble layer 18 which is presently used for bias compatibility between the lattice and the isolated areas. Layer 12 also creates its own confinement barrier and acts as an image plane for the current in the conductors.

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