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Browse Prior Art Database

Josephson Junctions Without Photoresist on Surface

IP.com Disclosure Number: IPCOM000087638D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Datwyler, K: AUTHOR [+2]

Abstract

In the prior art the oxide tunnel barrier of Josephson junctions is made by anodic oxidation in a glow discharge. The electrode surface being oxidized is in a window of the electrode insulation surrounded with photoresist. The photoresist is necessary to delineate the top electrode which is deposited immediately after preparing the tunnel barrier.

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Josephson Junctions Without Photoresist on Surface

In the prior art the oxide tunnel barrier of Josephson junctions is made by anodic oxidation in a glow discharge. The electrode surface being oxidized is in a window of the electrode insulation surrounded with photoresist. The photoresist is necessary to delineate the top electrode which is deposited immediately after preparing the tunnel barrier.

Some defects in the tunnel barrier oxide can be traced to the influence of the photoresist during oxidation. The proposed process avoids the photoresist entirely by filling the window in the SiO insulation with material of the bottom electrode until it covers part of the insulation and arranging the tunnel barrier on top of it. No photoresist is now present on the surface during oxidation. Finally, the top electrode is deposited on the blank surface and shaped by a subsequent photoresist and etch process. The device is then contacted and finished in the usual manner.

The first drawing depicts a junction made according to the prior art after vapor deposition of the top electrode and before stripping the photoresist. The second drawing shows a junction made according to this proposal after shaping the top electrode.

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