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Browse Prior Art Database

Large Area Solar Energy Photothermal Conversion

IP.com Disclosure Number: IPCOM000087652D
Original Publication Date: 1977-Feb-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Blakeslee, AE: AUTHOR [+2]

Abstract

Solar energy conversion can be accomplished with a thin gallium arsenide (GaAs) film on a heat conducting substrate. The GaAs material can be formed by reacting gases in the presence of a substrate so that the GaAs reaction product forms in place on the substrate. Suitable reacting gases are gallium trimethyl and arsine: Ga (CH(3))(3) + As H(3) -----> GaAs + 3 CH(4) heat. gases can be delivered through concentric pipes to a heated substrate.

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Large Area Solar Energy Photothermal Conversion

Solar energy conversion can be accomplished with a thin gallium arsenide (GaAs) film on a heat conducting substrate. The GaAs material can be formed by reacting gases in the presence of a substrate so that the GaAs reaction product forms in place on the substrate. Suitable reacting gases are gallium trimethyl and arsine: Ga (CH(3))(3) + As H(3) -----> GaAs + 3 CH(4) heat. gases
can be delivered through concentric pipes to a heated substrate.

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