Browse Prior Art Database

Ion Implantation of Emitter to Eliminate Arcing

IP.com Disclosure Number: IPCOM000087712D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Barile, CA: AUTHOR [+3]

Abstract

A bipolar device fabrication ion-implantation method for the formation of emitters and other regions through openings defined by silicon dioxide-silicon nitride composite masks.

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Ion Implantation of Emitter to Eliminate Arcing

A bipolar device fabrication ion-implantation method for the formation of emitters and other regions through openings defined by silicon dioxide-silicon nitride composite masks.

In bipolar devices, particularly bipolar device structures lateral defined by regions of recessed silicon dioxide 10, as shown in the drawing, conventional procedures utilize composite layers of silicon dioxide 11 and silicon nitride 12 for passivation as well as to define openings for the introduction of impurities. With such silicon dioxide silicon nitride composite masks defining openings 13, the introduction of impurities by ion implantation, particularly with high current ion beams, e.g., in the formation of the emitter or collector region, there is a great tendency toward charge buildup on the silicon nitride layer surface of the composite masking layer. Such a charge buildup is not dissipated laterally to the wafer holder but discharges into the silicon. The charge is sufficient to vaporize the silicon, causing a hole to appear in the silicon and destroy the device.

To eliminate this possiblity, the present method deposits a thin layer of a metal, such as aluminum layer 14, over the entire surface of the silicon nitride layer 12. Thus, during the ion implantation the aluminum layer acts to conduct charge accumulations away from the dielectric surface. Upon the completion of the ion-implantation step, the metal layer 14 is removed by c...