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Increasing the Etch Rate Ratio of SiO(2) Si in Fluorocarbon Plasma Etching

IP.com Disclosure Number: IPCOM000087770D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Coburn, JW: AUTHOR

Abstract

The etch rate ratio of SiO /Si in a fluorocarbon plasma is increased by the use of a solid surface in the discharge region. The solid surface is formed of any material which serves as a scavenger of F atoms. Examples of suitable materials are C, Si, Ti, W and Mo. The use of solid surfaces made of these materials lowers the etch rate of Si more than the etch rate of SiO(2), thereby increasing the SiO(2)/Si etch rate ratio.

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Increasing the Etch Rate Ratio of SiO(2) Si in Fluorocarbon Plasma Etching

The etch rate ratio of SiO /Si in a fluorocarbon plasma is increased by the use of a solid surface in the discharge region. The solid surface is formed of any material which serves as a scavenger of F atoms. Examples of suitable materials are C, Si, Ti, W and Mo. The use of solid surfaces made of these materials lowers the etch rate of Si more than the etch rate of SiO(2), thereby increasing the SiO(2)/Si etch rate ratio.

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