Browse Prior Art Database

End Point Detection System for Plasma Etching

IP.com Disclosure Number: IPCOM000087771D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Winters, HF: AUTHOR

Abstract

A system using a pressure transducer for detecting the end point in the plasma etching of a hole in a substrate is shown schematically above.

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End Point Detection System for Plasma Etching

A system using a pressure transducer for detecting the end point in the plasma etching of a hole in a substrate is shown schematically above.

The substrate 10 (for example, a wafer) to be etched is mounted on an O-ring 12 that is positioned on the fixture 14. The O-ring 12 forms a vacuum seal between the plasma containing relatively high pressure region 16 and the relatively low pressure chamber 18. The plasma in region 16 is generated from electrode 20. The chamber 18 has an electrode 22 connected to an RF source
24. A pressure transducer 26 and a vacuum pump 28 are associated with chamber 18.

When the plasma etching process produces a hole 30 in substrate 10, the pressure in chamber 18 increases and is detected by the pressure transducer 26. The size of the hole(s) could be monitored by the magnitude of the pressure increase.

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