Browse Prior Art Database

Merging Semiconductor Optoelectronics With Silicon Technology

IP.com Disclosure Number: IPCOM000087821D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Fang, FF: AUTHOR [+2]

Abstract

This article proposes an approach for mounting an independently processed GaP LED (light-emitting diode) array on a silicon carrier on which all the necessary electronics and interconnection patterns are prefabricated. The connections between the array and carrier are then made to form an integrated system.

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Merging Semiconductor Optoelectronics With Silicon Technology

This article proposes an approach for mounting an independently processed GaP LED (light-emitting diode) array on a silicon carrier on which all the necessary electronics and interconnection patterns are prefabricated. The connections between the array and carrier are then made to form an integrated system.

Figs. 1 and 2 illustrate a preferred approach to achieve this result, although several variations may be used to accomplish the same result.

As shown in Fig. 1, the fabrication of LED array 1 incorporates the standard highly efficient GaP LED technology using such steps as: liquid or vapor-phase deposition of GaAsP layer 2 on GaP substrate 3; Zn-diffusion through a mask to form P-diffused regions 4; and the introduction of isoelectronic traps either as atomic (N) or molecular traps (Zn-0) to achieve the efficient radiative transitions at room temperature. Beam-lead technology is used on LED array 1 to act both as contacts 5 and 6 to the individual P region 4 and n layer 2, respectively, as well as the bridge between GaP array 1 and the silicon carrier, as shown in Fig.
2. At the bottom of GaP substrate 3, a partially reflecting region 7 and absorbing region 8 in the form of an electrically nonconducting coating, are employed, so the light, in the case of region 7, is reflected and re-emitted from the top of the devices of array 1 and, in the case of region 8, light is absorbed to provide the optical...