Browse Prior Art Database

GaAs Solar Thermal Device

IP.com Disclosure Number: IPCOM000087827D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Blakeslee, AE: AUTHOR [+3]

Abstract

A solar thermal device operable at high temperatures with high solar absorbance and low infrared emittance may be made by placing gallium arsenide (GaAs) on tungsten (W). An antireflective coating, such as silicon dioxide (SiO(2)) or aluminum oxide (Al(2)O(3)), may be added.

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GaAs Solar Thermal Device

A solar thermal device operable at high temperatures with high solar absorbance and low infrared emittance may be made by placing gallium arsenide (GaAs) on tungsten (W). An antireflective coating, such as silicon dioxide (SiO(2)) or aluminum oxide (Al(2)O(3)), may be added.

The device may be made by vapor-depositing polycrystalline GaAs on polished tungsten to a surface roughness of about 2-5 mu. The device, when covered with an antireflective coating, has the reflectance (R) vs. wavelength (lambda) response shown in the figure.

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