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Browse Prior Art Database

Improved Process for LPE Growth

IP.com Disclosure Number: IPCOM000087828D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

DeGelormo, JF: AUTHOR [+2]

Abstract

This method facilitates the preparation of epitaxial layers of AlGaAs and GaAs on AlGaAs by preventing the formation of the natural oxide on the substrate.

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Improved Process for LPE Growth

This method facilitates the preparation of epitaxial layers of AlGaAs and GaAs on AlGaAs by preventing the formation of the natural oxide on the substrate.

There are many useful laser structures that can be made of AlGaAs and GaAs can be grown on AlGaAs surfaces after they have been exposed to air. A buried active-layer double heterojunction laser is one example. Prior workers in the field have reported that the addition of GaCl in the system will prevent the formation of the oxide on the surface of the AlGaAs substrates so that the AlGaAs GaAs layers may be readily grown on top of the substrate. They introduced GaCl gas into the system in a rather complex process.

It has now been discovered that by etching the gallium in an HCl-H(2)O solution, better LPE (liquid phase epitaxy) surfaces are obtained. We have found Cl species in the boat. This indicates that GaCl can easily be introduced in the system by etching the gallium in the HCl-H(2)O solution.

Etching is a simple process which not only provides clean gallium by etching away the Ga(2)O(3) from the surface, but it also introduces chlorine into the system so that good LPE layers can be grown on previously exposed AlGaAs substrates.

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