Browse Prior Art Database

Solid Solutions of Germanium and Gallium Arsenide

IP.com Disclosure Number: IPCOM000087830D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

The compound Ge(x)Ga(O.5(1-x)) may be employed to produce a double hetero-junction laser, shown in the figure, with improved heat dissipation. The lattice parameter of Ge is 5.65754. The thermal expansion coefficient of Ge is close to GaAs, and the thermal conductivity of Ge is considerably higher than that of GaAs.

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Solid Solutions of Germanium and Gallium Arsenide

The compound Ge(x)Ga(O.5(1-x)) may be employed to produce a double hetero-junction laser, shown in the figure, with improved heat dissipation. The lattice parameter of Ge is 5.65754. The thermal expansion coefficient of Ge is close to GaAs, and the thermal conductivity of Ge is considerably higher than that of GaAs.

The carrier concentration in the active cavity should be reasonably low.

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