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Bubble Domain Device Using Amorphous Silicon

IP.com Disclosure Number: IPCOM000087831D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

Generally, magnetic bubble devices have an insulating layer located over the magnetic bubble domain material. This insulating layer is typically SiO(2) onto which is deposited the magnetic layers used for bubble propagation and the conductive layer used for switches, etc.

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Bubble Domain Device Using Amorphous Silicon

Generally, magnetic bubble devices have an insulating layer located over the magnetic bubble domain material. This insulating layer is typically SiO(2) onto which is deposited the magnetic layers used for bubble propagation and the conductive layer used for switches, etc.

Rather than use SiO(2) as the insulating layer, it is proposed to use an amorphous Si layer, as shown in the figure. The use of amorphous Si has additional advantages, since this film has both reflective properties and insulating properties. Therefore, bubble domains in the bubble film can be viewed optically by shining light through the substrate and the bubble domain film, and then reflecting the light back through these layers. The use of amorphous Si eliminates the previous need for depositing a reflective layer over the entire bubble device.

The amorphous Si film is conveniently deposited by electron beam evaporation where the substrate temperature is 25-300 degrees C, and the pressure range is 5 x 10/-6/ - 2 x 10/-7/torr. An intrinsic Si slug is used as the evaporant. If desired, amorphous Si films can also be prepared by RF sputtering in an argon pressure range of 15-30 microns.

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