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Annealing of Bubble Domain Contiguous Disk Devices

IP.com Disclosure Number: IPCOM000087841D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Hendel, RJ: AUTHOR [+3]

Abstract

Ion-implanted devices for propagating magnetic bubble domains are well known. These devices operate by the formation of charged walls which propagate along the ion-implanted patterns, as the in-plane magnetic field reorients. Magnetic bubble domains are carried along by these moving charged walls. In order to have maximum coupling of the bubble flux with the magnetic flux of the charged walls, the ion-implantation thickness should be maximized with uniform planar magnetization throughout the thickness. This uniform magnetization is difficult to achieve since it is determined by the implantation damage profile, which itself is highly nonuniform in a Gaussian distribution, as shown by Fig. 1.

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Annealing of Bubble Domain Contiguous Disk Devices

Ion-implanted devices for propagating magnetic bubble domains are well known. These devices operate by the formation of charged walls which propagate along the ion-implanted patterns, as the in-plane magnetic field reorients. Magnetic bubble domains are carried along by these moving charged walls. In order to have maximum coupling of the bubble flux with the magnetic flux of the charged walls, the ion-implantation thickness should be maximized with uniform planar magnetization throughout the thickness. This uniform magnetization is difficult to achieve since it is determined by the implantation damage profile, which itself is highly nonuniform in a Gaussian distribution, as shown by Fig. 1. In order to make the magnetization in-plane, there exists a threshold damage concentration N(c) beyond which the implantation-induced planar anisotropy is large enough to overcome its uniaxial anisotropy in order to make the magnetization of the implanted region in-plane. Since the planar magnetization component profile essentially follows the damage profile, a uniform damage profile with damage concentration slightly larger than the threshold N(c) is desired. Excessive dosage will result in too much damage, causing the bubble domain surface to be faceted. Conversely, a uniform damage profile is not essential for hard bubble suppression applications, in which only a thin (1000 angstroms) capping layer is required.

To improve the damage profile depicted in Fig. 1, it is proposed to anneal the implanted devices in a helium (or oxygen or nitrogen) atmosphere at a temperature between 250 and 450 degrees C. Several implanted devices with differen...