Browse Prior Art Database

Preparation of Ultra Thin Garnet Films

IP.com Disclosure Number: IPCOM000087846D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cronemeyer, DC: AUTHOR [+3]

Abstract

When garnet films are prepared by liquid phase epitaxy (LPE), the thinnest film of high quality that can be produced is about 0.5 micron. However, for submicron bubble domain applications, the garnet films must be much thinner than this. The proposed technique allows one to use LPE to obtain garnet films having thicknesses less than 0.5 micron.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Preparation of Ultra Thin Garnet Films

When garnet films are prepared by liquid phase epitaxy (LPE), the thinnest film of high quality that can be produced is about 0.5 micron. However, for submicron bubble domain applications, the garnet films must be much thinner than this. The proposed technique allows one to use LPE to obtain garnet films having thicknesses less than 0.5 micron.

In this technique, a garnet film thicker than 0.5 micron (for example, about 1 micron) is grown by LPE and then reduced in thickness by chemical etching. Films of this thickness can be grown having very good quality. The thick garnet film is then etched in a 1:1 H(2)SO(4): H(3)PO(4) solution maintained at about 120 degrees C. The etch rate is about 0.04 micron/min., and therefore a film thickness of 0.1 microns is obtained after an etching time of about 22.5 min. Films thinned by this technique have been shown to etch uniformly with no thickness variation across the wafer. The surface finish of the etched film was maintained throughout the etching.

1