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Browse Prior Art Database

Lift Off Technique

IP.com Disclosure Number: IPCOM000087849D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kane, SM: AUTHOR [+2]

Abstract

Many microelectronic devices, including bubble domain devices, are fabricated using lift-off techniques where material is deposited on a resist layer and then removed by dissolving portions of the resist layer which have been previously unexposed. Often, lift-off fabrication fails due to the fact that the resist material dissolves improperly.

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Lift Off Technique

Many microelectronic devices, including bubble domain devices, are fabricated using lift-off techniques where material is deposited on a resist layer and then removed by dissolving portions of the resist layer which have been previously unexposed. Often, lift-off fabrication fails due to the fact that the resist material dissolves improperly.

The present technique enhances resist solubility in order to improve the reliability of the lift-off fabrication procedure. The steps of the process are the following:. 1. Application of the resist material. 2. Exposure and development of the desired pattern. 3. "Blanket" overexposure of the entire sample. 4. Deposition of the material to be lifted off. 5. Lift-off by dissolution of the resist in a solvent or developer.

The key step of the procedure is 3, where the entire sample is subjected to a blanket exposure. This increases the solubility of positive resists which facilitates actual lift-off of the deposited material.

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