Browse Prior Art Database

Fabrication of Amorphous Magnetic Films

IP.com Disclosure Number: IPCOM000087854D
Original Publication Date: 1977-Mar-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 3 page(s) / 39K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+2]

Abstract

Amorphous magnetic films are useful as bubble domain materials. The magnetic anisotropy of the amorphous film is one of the properties which must be carefully controlled in sign and magnitude depending upon the requirements of the device. For example, high perpendicular anisotropy is needed for the information storage layer of a bubble device, while low anisotropy is needed for capping layers used for hard bubble suppression. Still further applications may require that the amorphous material be magnetically isotropic or have a planar anisotropy.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 54% of the total text.

Page 1 of 3

Fabrication of Amorphous Magnetic Films

Amorphous magnetic films are useful as bubble domain materials. The magnetic anisotropy of the amorphous film is one of the properties which must be carefully controlled in sign and magnitude depending upon the requirements of the device. For example, high perpendicular anisotropy is needed for the information storage layer of a bubble device, while low anisotropy is needed for capping layers used for hard bubble suppression. Still further applications may require that the amorphous material be magnetically isotropic or have a planar anisotropy.

Critical process parameters can be used to maximize the uniaxial anisotropy and minimize the magnetization of sputter-deposited amorphous Gd-Co-X alloys to optimize the properties of these materials for bubble device applications. The controlling process parameters are bias voltage, target voltage, working gas composition and pressure, system aspect ratio (target diameter/target-to- substrate distance) and target composition.

Fig. 1 shows the dependency of the magnetic anisotropy K(1) on bias voltage V(b). The experimental data are fit to the experimentally derived equation.

(Image Omitted)

where V(c) is the critical bias voltage to maximize K(u), V(t)is the target voltage, V(b) is the applied bias voltage, and C is an experimentally determined constant approximately equal to 10/6/ ergs/cm/3/. The critical bias voltage for maximum anisotropy occurs between 100 and 200 volts. For example, when argon is the working gas, V(c) = 150 volts, while V(c) =...