Browse Prior Art Database

Solid State Optical Scanner

IP.com Disclosure Number: IPCOM000087997D
Original Publication Date: 1977-Apr-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Tompkins, JD: AUTHOR

Abstract

The solid-state optical scanner is designed so as to reduce carrier losses and to enhance response to the blue region of electromagnetic radiation.

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Solid State Optical Scanner

The solid-state optical scanner is designed so as to reduce carrier losses and to enhance response to the blue region of electromagnetic radiation.

Fig. 1 is a section of the scanner taken through line 1-1 in Fig. 2, which is a plan or top view of the scanner. The scanner includes a semiconductor substrate 10 made of P- type material in which are formed photodiodes by N+ diffusion strips 12. A thick oxide 14 is formed on the surface of substrate 10 with a strip of thin oxide 16 being disposed within openings in the thick oxide 14. The oxides 14 and 16 may be silicon dioxide. A first metal layer 18, such as aluminum, covers the thick oxide 14 and the edges of the thin oxide strip 16. A second metal layer 20, which may be made of chrome-copper-gold or aluminum and copper, overlaps the first metal layer and is insulated therefrom by an insulating layer 22, which may be quartz or polyimide. Conductive fingers or strips 24 are located on the thin oxide strip 16 in contact with the first metal layer 18. First metal layer 18 is connected to substrate 10, which is preferably at a negative potential, by contacts 26. Second metal layer 20 is also connected to substrate 10, or to a more negative potential, by any suitable means (not shown).

In operation, electromagnetic or light waves 25, such as blue light, pass through the thin oxide strip 16 into the P- type semiconductor substrate 10 where hole and electron pairs are produced. Since the fingers 24 are maintained at a negative voltage, the holes are attracted to them and the electrons are r...