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Integrated Circuit Package Structure for Preventing Sulfur Corrosion

IP.com Disclosure Number: IPCOM000088020D
Original Publication Date: 1977-Apr-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Griffin, DD: AUTHOR [+2]

Abstract

In the integrated-circuit field, the problem of sulfur corrosion has occasionally arisen where the integrated-circuit components are used in an atmosphere heavily laden with sulfur. The sulfur corrosion problem has particularly tended to occur where the integrated-circuit chips are supported on ceramic or other insulative substrates having silver-containing land patterns.

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Integrated Circuit Package Structure for Preventing Sulfur Corrosion

In the integrated-circuit field, the problem of sulfur corrosion has occasionally arisen where the integrated-circuit components are used in an atmosphere heavily laden with sulfur. The sulfur corrosion problem has particularly tended to occur where the integrated-circuit chips are supported on ceramic or other insulative substrates having silver-containing land patterns.

In accordance with the present approach, the effect of ambient sulfur is minimized through the expedient of locating within the housing for the integrated- circuit, deposits of silver which act as a gettering agent for ambient sulfur which enters the housing, thereby preventing such sulfur from affecting the metallic lands.

In accordance with the figure, integrated-circuit chip 10 is mounted on ceramic substrate 11 having a land pattern 12. These lands contain silver. The inner side of housing 13 is lined with a layer 14 comprising a precipitate of silver particles in a vehicle of a dielectric material.

Although the present concept has been illustrated primarily for the purpose of protecting silver-containing lands from sulfur, it will be understood that this approach can be used to protect lands of other metallic materials from corrosive elements in the ambient, which attack such metals, through the expedient of locating gettering deposits of the metal within the integrated-circuit package housing.

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