Browse Prior Art Database

Bipolar Integrated Circuits Without Epitaxial Layers

IP.com Disclosure Number: IPCOM000088024D
Original Publication Date: 1977-Apr-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Michel, AE: AUTHOR [+3]

Abstract

There is a need in the integrated-circuit field for bipolar structures without epitaxial layers.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Bipolar Integrated Circuits Without Epitaxial Layers

There is a need in the integrated-circuit field for bipolar structures without epitaxial layers.

The present process is directed to the formation of such a structure using high energy implants. Such implants are used to form collector regions deep within the substrate, i.e., the buried collector. This is accomplished by forming recessed dielectric regions in the substrate, such as recessed silicon dioxide regions, which will serve to define the buried collector regions and then ion- implant an unpleasant impurity, such as phosphorous, deep into the substrate to form the buried subcollector defined by the bordering recessed silicon dioxide regions.

1