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High Resistivity Poly Oxide

IP.com Disclosure Number: IPCOM000088026D
Original Publication Date: 1977-Apr-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Abbas, SA: AUTHOR [+2]

Abstract

Dry or wet thermal oxide grown on polycrystalline silicon has a much higher conductivity than dry or wet thermal oxide grown on single crystal silicon. The conductivity of this polycrystalline silicon-silicon dioxide composite is especially high if the polysilicon is the cathode.

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High Resistivity Poly Oxide

Dry or wet thermal oxide grown on polycrystalline silicon has a much higher conductivity than dry or wet thermal oxide grown on single crystal silicon. The conductivity of this polycrystalline silicon-silicon dioxide composite is especially high if the polysilicon is the cathode.

The following process significantly reduces the conductivity of the polysilicon- silicon dioxide composite: (1) Deposit chemical-vapor-deposited SiO(2) on top of the polysilicon layer. (2) Grow wet or dry thermal SiO(2) under the SiO(2) of Step
(1).

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