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Preparation of High Temperature Phosphosilicate Glass

IP.com Disclosure Number: IPCOM000088027D
Original Publication Date: 1977-Apr-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Li, PC: AUTHOR [+2]

Abstract

Phosphosilicate glass (PSG) may be formed by the high temperature reaction of one of the silicate halides plus phosphine and oxygen in an inert carrier gas and hydrogen varying from 0 to 10 percent in feed mixture. The reaction temperature of this chemical vapor deposition process is in the range of 600 to 1000 Degrees C.

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Preparation of High Temperature Phosphosilicate Glass

Phosphosilicate glass (PSG) may be formed by the high temperature reaction of one of the silicate halides plus phosphine and oxygen in an inert carrier gas and hydrogen varying from 0 to 10 percent in feed mixture. The reaction temperature of this chemical vapor deposition process is in the range of 600 to 1000 Degrees C.

In the high temperature chemical vapor deposition process, the PSG film is homogeneously formed as it is deposited. No further "drive-in" step in the form of a subsequent heating or annealing is required. The process has the combined deposition and "drive-in" which is normally utilized in the usual POCl(3) process. A typical PSG film may be formed by the following reaction: H(2) + SiBr(4) + PH(3) + O(2) 600-1000 Degrees C over N(2) Carrier ---> PSG + Byproducts

It has been shown that PSG layers may be controllably produced as thin as 50 angstroms with excellent quality.

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