Browse Prior Art Database

Light Emitting Diode in AlN With Tunnel Injection

IP.com Disclosure Number: IPCOM000088164D
Original Publication Date: 1977-Apr-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Rutz, RF: AUTHOR

Abstract

A light-emitting device may be made using aluminum nitride (AlN), with carriers being injected through an insulating tunnelling barrier, as shown in the figure.

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Light Emitting Diode in AlN With Tunnel Injection

A light-emitting device may be made using aluminum nitride (AlN), with carriers being injected through an insulating tunnelling barrier, as shown in the figure.

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