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Fabrication Process for DSDT Face Plates

IP.com Disclosure Number: IPCOM000088169D
Original Publication Date: 1977-Apr-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Park, KC: AUTHOR [+2]

Abstract

The conventional deformographic storage display tube (DSDT) screens consist of a natural substrate, i.e., monocrystalline mica film, covered by an elastomer layer and a top silver coating. Electric charge written onto the mica by an electron beam causes the elastomer to deform so that reflected illumination from the silver-coated side of the elastomer layer displays the information stored on the screen. The subject DSDT face plate fabrication process produces a self-supporting layer structure and eliminates the use of mica-type substrates. The process steps are described for the structure shown in Figs. 1a and 1b.

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Fabrication Process for DSDT Face Plates

The conventional deformographic storage display tube (DSDT) screens consist of a natural substrate, i.e., monocrystalline mica film, covered by an elastomer layer and a top silver coating. Electric charge written onto the mica by an electron beam causes the elastomer to deform so that reflected illumination from the silver-coated side of the elastomer layer displays the information stored on the screen. The subject DSDT face plate fabrication process produces a self- supporting layer structure and eliminates the use of mica-type substrates. The process steps are described for the structure shown in Figs. 1a and 1b.

Step 1. Deposit a thin (0.2-1.0 mu m), secondary electron emission layer 10 (e.g., MgO, MgF(2), CeO(2), Y(2)O(3), or Yb(2)O(3)) on a wafer 12, e.g., a Si wafer or any other etchable wafer. This step may be omitted depending on the emission characteristics of the thick dielectric layer used in the next step.

Step 2. Deposit a thick (0.5-1.0 mil) dielectric layer 14, e.g., Schott glass or SiO(x).

Step 3. Deposit an elastomer layer 16 on top of the dielectric layer 14.

Step 4. Deposit a reflection layer 18, e.g., Ag, on top of the elastomer layer
16.

Step 5. Etch off the silicon wafer 12 from the back side, exposing the secondary electron emission layer 10 and leaving only the wafer frame 12a around the target layer structure.

The deposition of the secondary electron emission layer 10 and the thick, dielectric laye...