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Precise Determination of Crystallographic Orientation of a Semiconductor Device by Anisotropic Chemical Etching

IP.com Disclosure Number: IPCOM000088203D
Original Publication Date: 1977-May-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pugacz-Muraskiewicz, I: AUTHOR

Abstract

In semiconductor devices, it is often desirable to know the angle of the surface of the semiconductor wafer with reference to one of the low index planes of the wafer. These low index planes are the 111, 110, and 100 planes.

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Precise Determination of Crystallographic Orientation of a Semiconductor Device by Anisotropic Chemical Etching

In semiconductor devices, it is often desirable to know the angle of the surface of the semiconductor wafer with reference to one of the low index planes of the wafer. These low index planes are the 111, 110, and 100 planes.

A method of determining the orientation of the surface of a coated wafer to such a low index plane can be readily achieved by the following method.

The wafer whose surface angle is to be measured is coated with a suitable protective material, such as photoresist, and a precise regular geometric opening created in the coating by any suitable method. This geometric figure can be a circle, square, hexagon, etc.

Once the opening is created in the coating, the exposed semiconductor material is anisotropically etched using any suitable anisotropic etchant which will etch the underlying semiconductor through the opening to form a regular etch pit. Once the etch pit is formed, the distance between the center of the opening in the coating and the center of the etch pit is measured. The distance between the centers is a function of the angle of the surface with respect to the referenced low index plane.

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