Browse Prior Art Database

Etch Process for Chromium in Contact with Copper

IP.com Disclosure Number: IPCOM000088209D
Original Publication Date: 1977-May-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Abolafia, OR: AUTHOR [+2]

Abstract

Chromium is selectively etched through a resist mask in the presence of copper and/or cermet (chromium silicon oxides) using a dilute acid solution in an organic solvent at elevated temperatures.

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Etch Process for Chromium in Contact with Copper

Chromium is selectively etched through a resist mask in the presence of copper and/or cermet (chromium silicon oxides) using a dilute acid solution in an organic solvent at elevated temperatures.

Chromium etch rates obtained at various HCl concentrations and temperatures in alcohols, ethers and esters are as follows: Organic HCl Temperature, Cr Etch Rate Medium concentration, % Degrees F A/sec Glycerol 4 120 3.3 '' '' 150 10.0 '' 2 150 6.7
CARBITOL* 4 80 1.5 '' '' 100 3.3 '' '' 110 5.0 '' '' 120 8.4 '' 2 110 4.4 '' '' 120 5.9
CELLOSOLVE* Acetate 4 105 8.8

Ethylene

Glycol 5 110 2.4 * Trademarks of Union Carbide Corporation.

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