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Ammonium Hydroxide Quench for Buffer Etch

IP.com Disclosure Number: IPCOM000088235D
Original Publication Date: 1977-May-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brandis, E: AUTHOR [+4]

Abstract

Prior to the in situ deposition of a metallurgy for wiring atop semiconductor substrates, the product is subjected to a pre-deposition buffer etch in HF. The purpose is to remove the ash residue in the underlay stencil formed by the reactive ion etching of the photoresist stencil and to remove the passivation layer on the contacts made to the semiconductor substrate.

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Ammonium Hydroxide Quench for Buffer Etch

Prior to the in situ deposition of a metallurgy for wiring atop semiconductor substrates, the product is subjected to a pre-deposition buffer etch in HF. The purpose is to remove the ash residue in the underlay stencil formed by the reactive ion etching of the photoresist stencil and to remove the passivation layer on the contacts made to the semiconductor substrate.

Micro-blisters occur in the metallurgy after sintering or after the deposition of quartz. Analysis of the micro-blisters has revealed traces of fluorine in the blisters. An ammonium hydroxide quench incorporated immediately following the HF etch eliminates these micro-blisters.

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