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Integrated Guarded Ringed Schottky Clamp

IP.com Disclosure Number: IPCOM000088357D
Original Publication Date: 1977-Jun-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Case, JR: AUTHOR

Abstract

To solve some of the inherent problems (for example, unpredictable reverse breakdown characteristics and increased leakage with time due to ion migration) with Schottky diodes, it has been suggested that a P+ guard ring be placed around a Schottky diode made from Si n-Epi.

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Integrated Guarded Ringed Schottky Clamp

To solve some of the inherent problems (for example, unpredictable reverse breakdown characteristics and increased leakage with time due to ion migration) with Schottky diodes, it has been suggested that a P+ guard ring be placed around a Schottky diode made from Si n-Epi.

The suggested technique allows the placing of a guard ring around the Schottky clamp of integrated transistors with minimum impact on the size of the device.

Figs. 1 and 2 depict a manufacturing procedure whereby the above is accomplished in a Schottky clamp transistor (npn and pnp). The base region of the npn or the collector region of the pnp is used to form the guard ring.

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