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Tunneling Injection Logic Circuit

IP.com Disclosure Number: IPCOM000088442D
Original Publication Date: 1977-Jun-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Varadarajan, HD: AUTHOR

Abstract

The reverse tunneling characteristic (Fig. 1) of an emitter-base junction may be employed to inject current into the base of a transistor. The breakdown is made gradual rather than abrupt by suitable doping of emitter and base diffusions, while retaining acceptable transistor characteristics. Beta degradation is no problem as the reverse biased junction is never used in the normal transistor mode. Area efficient switching circuits may be designed, with a supply (VCC) of 4 to 5 volts, using an additional emitter as a load device.

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Tunneling Injection Logic Circuit

The reverse tunneling characteristic (Fig. 1) of an emitter-base junction may be employed to inject current into the base of a transistor. The breakdown is made gradual rather than abrupt by suitable doping of emitter and base diffusions, while retaining acceptable transistor characteristics. Beta degradation is no problem as the reverse biased junction is never used in the normal transistor mode. Area efficient switching circuits may be designed, with a supply (VCC) of 4 to 5 volts, using an additional emitter as a load device.

Logic may be performed in two different modes:

a) by using Schottky diodes in the collector as in Schottky transistor logic (Fig. 2), and

b) by using multiemitters as in TTL (Fig. 3).

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