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Low Power Dissipation Schottky Barrier Diode Transistor Off Chip Receiver

IP.com Disclosure Number: IPCOM000088454D
Original Publication Date: 1977-Jun-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Chin, WB: AUTHOR [+3]

Abstract

Circuit A may be used to receive a logical signal driven by an off-chip driver with a voltage swing of +0.6 volt to +2.4 volts and a threshold level in the order of +1.1 volts. The output, 0, of circuit A inverts the logic signal and converts to voltage levels +1.8volts (logical 1) and +0.6 volt (logical 0). It can drive internal logic gates such as circuit B.

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Low Power Dissipation Schottky Barrier Diode Transistor Off Chip Receiver

Circuit A may be used to receive a logical signal driven by an off-chip driver with a voltage swing of +0.6 volt to +2.4 volts and a threshold level in the order of +1.1 volts. The output, 0, of circuit A inverts the logic signal and converts to voltage levels +1.8volts (logical 1) and +0.6 volt (logical 0). It can drive internal logic gates such as circuit B.

The salient features of circuit A are: 1. It draws no current from the driver when the input is at the up level. 2. It sinks a minimal current into the driver when the input is at the down level. 3. It has a good DC noise tolerance.

SBD1 is a low voltage, tantalum-chrome or titanium-tungsten Schottky barrier diode, and SBD2 is a high voltage, PtSi (with barrier) copper-aluminum Schottky barrier diode. Together, they provide a switching threshold in the range of 900 mv to 1200 mv. When the output of the driver is at an up level (1.5 volts), the diode, SBD1, is reverse-biased. This prevents driver current and permits the driver to have high fan-out.

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