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Pre Epi Sub Device Gettering

IP.com Disclosure Number: IPCOM000088463D
Original Publication Date: 1977-Jun-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brack, K: AUTHOR [+3]

Abstract

This method serves to form getter centers for defects and contaminations in semiconductor wafers during the production of integrated semiconductors or arrangements.

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Pre Epi Sub Device Gettering

This method serves to form getter centers for defects and contaminations in semiconductor wafers during the production of integrated semiconductors or arrangements.

The method starts from the proven semiconductor technology of applying to a semiconductor substrate an epitaxial (epi) layer accommodating the actual devices, as well as the buried subcollector and isolation zones belonging to said epitaxial layers.

Prior to the application of the epitaxial layer and prior to or after diffusion or implantation of the subcollector and/or subisolation zones, elements entering into stable combinations with the silicon are implanted into these substrate areas.

Suitable elements are nitrogen, carbon and oxygen which form the compounds Si(3)N(4), SiC and SiO(2), respectively. Oxide or resist masks which are necessary for introducing the doping elements can be used as implantation masks.

During the subsequent heat treatments, the abovementioned immobile and thermally stable compounds are obtained, acting as active getter centers for defects and contaminations immediately below the device region during the growth of the epitaxial layer and the subsequent heat process sequence. The method described permits an improvement of the yield potential of wafers having insufficient "natural" gettering properties.

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