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Enhancing the Fragmentation of Molecular Species in a Plasma Etching Discharge

IP.com Disclosure Number: IPCOM000088526D
Original Publication Date: 1977-Jun-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Coburn, JW: AUTHOR

Abstract

The etch rate of materials in a plasma etching discharge can be increased by the use of an auxiliary electrode in the discharge volume. This electrode should be of relatively large area and should be biased negatively (-50 to -100 volts) with respect to the discharge. Positive molecular ions such as CF(3)/+/, C(2)F(5)/+/, etc., are accelerated toward this electrode and, upon collision with it, dissociate into primary neutral atomic fragments many of which are reflected back into the discharge volume. In this way, the concentration of F atoms in the gas phase can be increased leading to an increase in the etch rate of materials which rely upon the F atom concentration for etching.

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Enhancing the Fragmentation of Molecular Species in a Plasma Etching Discharge

The etch rate of materials in a plasma etching discharge can be increased by the use of an auxiliary electrode in the discharge volume. This electrode should be of relatively large area and should be biased negatively (-50 to -100 volts) with respect to the discharge. Positive molecular ions such as CF(3)/+/, C(2)F(5)/+/, etc., are accelerated toward this electrode and, upon collision with it, dissociate into primary neutral atomic fragments many of which are reflected back into the discharge volume. In this way, the concentration of F atoms in the gas phase can be increased leading to an increase in the etch rate of materials which rely upon the F atom concentration for etching.

In a plasma etching system using C(3)F(8) as the etchant, the use of the auxiliary electrode increases the concentration of the F atoms, and the etch rate of silicon, for example, is increased relative to silicon dioxide.

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